| PART |
Description |
Maker |
| BSS138PS |
60 V, 320 mA dual N-channel Trench MOSFET 320 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
NXP Semiconductors N.V.
|
| BSS138BKS-15 |
60 V, 320 mA dual N-channel Trench MOSFET
|
NXP Semiconductors
|
| SGL160N60UFD SGL160N60UFDTU |
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 160 A, 600 V, N-CHANNEL IGBT, TO-264AA
Ultrafast IGBT
Discrete, High Performance IGBT with Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| APT6032AVR |
POWER MOS V 600V 17.5A 0.320 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT5032CVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 14A 0.320 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| MMT05A260T3G MMT05A230T3G MMT05A230T306 MMT05A310T |
Thyristor Surge Protectors High Voltage Bidirectional TSPD 320 V, SILICON SURGE PROTECTOR
Thyristor Surge Protectors(晶阐管浪涌电压保护器) 320 V, SILICON SURGE PROTECTOR
|
ONSEMI[ON Semiconductor]
|
| 300UF160AYPD 70UF160AYPD 300U30A 300U 300U80A 300U |
STANDARD RECOVERY DIODES Stud Version 标准恢复二极管螺柱版
320 x 240 pixel format, Uses bare die driver IC 标准恢复二极管螺柱版
320 x 240 pixel format, Chip-On-Glass Technology 标准恢复二极管螺柱版
STANDARD RECOVERY DIODES 250A 标准恢复二极50A
240 x 64 pixel format, CFL, LED, or EL Backlight available 标准恢复二极管螺柱版
|
IRF[International Rectifier]
International Rectifier, Corp.
MtronPTI
|
| MN6755240 MN6755320 |
(MN6755240/320) Microcontroller
|
Matsushita Electric
|
| 2986 |
320 MHz Center Frequency
|
KR Electronics, Inc.
|
